DocumentCode
1858318
Title
Chemical sensing with ZnO nanowire
Author
Fan, Zhiyong ; Lu, Jia G.
Author_Institution
Dept. of Chem. Eng., Univ. of California-Irvine, Irvine, USA
fYear
2005
fDate
11-15 July 2005
Firstpage
403
Abstract
Zinc oxide nanowires were configured as n-channel field effect transistors. These transistors were implemented as chemical sensors for detection of various gases. Nanowire´s ammonia sensing behavior was observed to switch from oxidizing to reducing when temperature increased from 300 to 500 K. This effect is attributed to the temperature dependent chemical potential shift. Carbon monoxide was found to increase the nanowire conductance in the presence of oxygen. In addition, nanowire detection sensitivity dependence on the diameter was investigated.
Keywords
II-VI semiconductors; chemical potential; field effect transistors; gas sensors; nanowires; zinc compounds; 300 to 500 K; ZnO; ZnO nanowire; ammonia sensing; chemical potential shift; chemical sensing; chemical sensors; n-channel field effect transistors; nanowire conductance; oxidizing; zinc oxide nanowires; Chemical sensors; FETs; Gases; Monitoring; Nanoscale devices; Nanotechnology; Switches; Temperature dependence; Temperature sensors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN
0-7803-9199-3
Type
conf
DOI
10.1109/NANO.2005.1500782
Filename
1500782
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