Title :
Chemical sensing with ZnO nanowire
Author :
Fan, Zhiyong ; Lu, Jia G.
Author_Institution :
Dept. of Chem. Eng., Univ. of California-Irvine, Irvine, USA
Abstract :
Zinc oxide nanowires were configured as n-channel field effect transistors. These transistors were implemented as chemical sensors for detection of various gases. Nanowire´s ammonia sensing behavior was observed to switch from oxidizing to reducing when temperature increased from 300 to 500 K. This effect is attributed to the temperature dependent chemical potential shift. Carbon monoxide was found to increase the nanowire conductance in the presence of oxygen. In addition, nanowire detection sensitivity dependence on the diameter was investigated.
Keywords :
II-VI semiconductors; chemical potential; field effect transistors; gas sensors; nanowires; zinc compounds; 300 to 500 K; ZnO; ZnO nanowire; ammonia sensing; chemical potential shift; chemical sensing; chemical sensors; n-channel field effect transistors; nanowire conductance; oxidizing; zinc oxide nanowires; Chemical sensors; FETs; Gases; Monitoring; Nanoscale devices; Nanotechnology; Switches; Temperature dependence; Temperature sensors; Zinc oxide;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500782
