• DocumentCode
    1858331
  • Title

    A 50-nm 1.2-V GexTe1−x/Sb2Te3 superlattice topological-switching random-access memory (TRAM)

  • Author

    Tai, M. ; Ohyanagi, T. ; Kinoshita, M. ; Morikawa, T. ; Akita, K. ; Takato, M. ; Shirakawa, H. ; Araidai, M. ; Shiraishi, K. ; Takaura, N.

  • Author_Institution
    Low-power Electron. Assoc. & Project, Tsukuba, Japan
  • fYear
    2015
  • fDate
    16-18 June 2015
  • Abstract
    A 50nm topological-switching random-access memory (TRAM) was fabricated for the first time. A high-quality GexTe1-x/Sb2Te3 superlattice film enabled set and reset voltages of TRAM to be less than 40% of those of PRAM. Statistical analysis of 16kb data showed the reset voltage to be less than 1.2 V, the lowest as a TRAM test chip.
  • Keywords
    antimony alloys; germanium alloys; integrated circuit testing; logic testing; network topology; random-access storage; statistical analysis; superlattices; tellurium alloys; GexTe1-x-Sb2Te3; PRAM; TRAM test chip; parameter random access memory; reset voltages; size 50 nm; statistical analysis; superlattice film; superlattice topological-switching random-access memory; voltage 1.2 V; Films; Memory management; Metals; Phase change random access memory; Resistance; Superlattices; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI Technology), 2015 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2015.7223707
  • Filename
    7223707
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1858331