Controlled nucleation of InAs/GaAs and InGaAs/GaAs quantum dots for optoelectronic device integration

We demonstrate that InAs and InGaAs quantum dots can be grown selectively in specific regions of GaAs substrates using selective-area MOCVD. Growth parameters can be controlled to obtain high density ( ∼10¹⁰/cm²) of defect free quantum dots. Emission spectra from these selectively grown dots are presented and are comparable in linewidth to that from dots grown on unpatterned substrates. We propose that this growth scheme can be used for fabrication of quantum dot lasers integrated with waveguides.