Title :
Electron diffusion in 0.18 μm MOS transistors at 200 μC
Author :
Gutierrez-D, E.A.
Author_Institution :
Dept. of Electron., INAOE, Puebla
Abstract :
A 0.18 mum CMOS technology has been characterized and modeled from room temperature (20degC) up to 200degC. The carrier mobility, the surface potential, the gradient of inversion charges, and the electric field are calculated by solving the Poisson and the continuity equations. The drift of charges rather than the charge diffusion is found to be responsible for the temperature-independent drain current for the case of a 0.18 mum technology.
Keywords :
CMOS integrated circuits; MOSFET; Poisson equation; carrier mobility; CMOS technology; MOS transistors; Poisson equations; carrier mobility; charge diffusion; continuity equations; electron diffusion; size 0.18 mum; surface potential; temperature 200 C; CMOS technology; Circuits and systems; Electrons; Integrated circuit modeling; MOSFETs; Microprocessors; Poisson equations; Semiconductor device modeling; Temperature dependence; Voltage; MOS transistor; charge diffusion; high temperature;
Conference_Titel :
Devices, Circuits and Systems, 2008. ICCDCS 2008. 7th International Caribbean Conference on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-1956-2
Electronic_ISBN :
978-1-4244-1957-9
DOI :
10.1109/ICCDCS.2008.4542661
