• DocumentCode
    1858481
  • Title

    Self-limited RRAM with ON/OFF resistance ratio amplification

  • Author

    Sung Hyun Jo ; Kumar, Tanmay ; Zitlaw, Cliff ; Nazarian, Hagop

  • Author_Institution
    Crossbar Inc., Santa Clara, CA, USA
  • fYear
    2015
  • fDate
    16-18 June 2015
  • Abstract
    We demonstrate sub-5nm filament based electrochemical metallization RRAM with self-limited program in a reliable and controllable manner. This RRAM removes the necessity for any external current compliance in a 1TnR (1S1R) architecture. Furthermore, we report a novel technique to amplify RRAM´s intrinsic ON/OFF resistance ratio by a factor of >104, which offers significant cell-, circuit- and system-level benefits such as reduced power, reduced BER and increased read bandwidth in high density RRAM.
  • Keywords
    error statistics; integrated circuit metallisation; integrated circuit testing; low-power electronics; resistive RAM; BER; ON-OFF resistance ratio amplification; bit error rate; filament based electrochemical metallization; high density RRAM; self-limited RRAM; self-limited program; Bandwidth; Metallization; Reliability; Resistance; Sensors; Switches; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI Technology), 2015 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2015.7223715
  • Filename
    7223715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1858481