Title :
Novel selector for high density non-volatile memory with ultra-low holding voltage and 107 on/off ratio
Author :
Hongxin Yang ; Minghua Li ; Wei He ; Yu Jiang ; Kian Guan Lim ; Wendong Song ; Zhuo, Victor Yi-Qian ; Chun Chia Tan ; Eng Keong Chua ; Weijie Wang ; Yi Yang ; Rong Ji
Author_Institution :
Data Storage Inst., Agency for Sci., Technol. & Res., Singapore, Singapore
Abstract :
We present a novel selector made of doped-chalcogenide material. This selector not only achieves low holding voltage (0.2 V) and large on/off ratio (>107), but also exhibits the high on-current density (>1.6 MA/cm2) and large hysteresis window (1.2 V). Besides, excellent selector performances with ultra-low off-state leakage current (10 pA), high switching speed (<;10 ns), high endurance (>109), good thermal stability (up to 180°C) have been demonstrated. Furthermore, the device exhibits good scalability which is suitable for 3D array integrations.
Keywords :
current density; hysteresis; leakage currents; random-access storage; thermal stability; 3D array integrations; current 10 pA; doped-chalcogenide material; endurance; hysteresis window; nonvolatile memory; on-current density; on-off ratio; selector performances; switching speed; thermal stability; ultra-low holding voltage; ultra-low off-state leakage current; Current density; Hysteresis; Nonvolatile memory; Resistance; Switches; Thermal stability; Very large scale integration;
Conference_Titel :
VLSI Technology (VLSI Technology), 2015 Symposium on
Conference_Location :
Kyoto
DOI :
10.1109/VLSIT.2015.7223716
