DocumentCode
1858552
Title
CMOS based arrays of nanogap devices for molecular electronics
Author
Ruttkowski, Eike ; Luyken, R. Johannes ; Mustafa, Yacoub ; Specht, Michael ; Hofmann, Franz ; Städele, Martin ; Rösner, Wolfgang ; Weber, Werner ; Waser, Rainer ; Risch, Lothar
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2005
fDate
11-15 July 2005
Firstpage
438
Abstract
In this paper we present a novel nanogap device architecture for molecular electronics which is fully CMOS compatible and non-invasive to the contacted self-assembled monolayer. The device exhibits precise control over the electrode spacing. Single cells as well as arrays with electrode distances of 2.5 nm have been realized and characterized in terms of basic functionality and yield. Simulations have revealed scalability for feature sizes down to the ten nanometer regime.
Keywords
CMOS integrated circuits; electrodes; molecular electronics; monolayers; self-assembly; CMOS based arrays; electrode spacing; molecular electronics; nanogap devices; self-assembled monolayer; CMOS technology; Conductivity; Electrodes; Fabrication; Gold; Molecular electronics; Nanoscale devices; Nanotechnology; Rough surfaces; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN
0-7803-9199-3
Type
conf
DOI
10.1109/NANO.2005.1500792
Filename
1500792
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