Laser assisted imprint of silicon nanostructure with good crystal quality

Author

Liang, Eih-Zhe ; Huang, Zhao-Ren ; Lin, Ching-Fuh ; Kuan, Chieh-Hsiung

Author_Institution

Graduate Inst. of Electro-optical Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2005

fDate

11-15 July 2005

Firstpage

452

Abstract

Excimer laser assisted imprint technology is implemented to create nanostructure on silicon substrate. Patterns with 25-nm feature sizes are successfully fabricated on quartz mold using electron beam lithography for nano-imprint. Transfer of nano-meter features to silicon is experimented. Parameters for optimal imprint are investigated. With a peak light intensity of 1∼2 J/cm², imprint pressure of 10∼100 g/cm², and high vacuum at 10⁶ torr, nano-imprint has very good results. The carrier lifetimes before and after laser-assisted imprint are studied and discovered to vary from 1818 μs to 640 μs. This small damage of Si substrate is attributed to recrystallization of silicon.

Keywords

carrier lifetime; electron beam lithography; elemental semiconductors; laser materials processing; nanolithography; nanopatterning; nanostructured materials; recrystallisation; silicon; soft lithography; 25 nm; Si; carrier lifetimes; electron beam lithography; excimer laser assisted imprint technology; good crystal quality; high vacuum; imprint pressure; nanoimprint; optimal imprint; pattern size; peak light intensity; quartz mold; recrystallization; silicon nanostructure; silicon substrate; Charge carrier lifetime; Dry etching; Electron beams; Lasers and electrooptics; Lighting; Lithography; Nanopatterning; Nanotechnology; Optical pulses; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500797

Filename

1500797