Title :
High frequency force sensing with piezoresistive cantilevers
Author :
Doll, J.C. ; Petzold, B.C. ; Ghale, P. ; Goodman, M.B. ; Pruitt, B.L.
Author_Institution :
Depts. of Mech. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
We present the design, fabrication and characterization of sub-micron piezoresistive silicon cantilevers for high frequency force detection. The cantilevers are fabricated by a simple three-mask process and doped using POCl3 diffusion, which enables high doping levels and negligible lattice damage. Devices have a force resolution of 298 pN from 1 Hz - 50 kHz (f0 = 187 kHz) and 678 pN up to 100 kHz (f0 = 419 kHz), the highest combination of force resolution and measurement bandwidth to date.
Keywords :
cantilevers; force sensors; masks; micromechanical devices; piezoresistive devices; semiconductor doping; POCl3; doping; force detection; force resolution; high frequency force sensing; piezoresistive cantilever; submicron piezoresistive silicon cantilever; three-mask process; Atomic force microscopy; Biomedical optical imaging; Doping; Fabrication; Force measurement; Force sensors; Frequency; Optical sensors; Piezoresistance; Piezoresistive devices; cantilever; force sensor; piezoresistor;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
DOI :
10.1109/SENSOR.2009.5285696
