• DocumentCode
    1858665
  • Title

    Current transport in carbon nanotube transistors

  • Author

    Pourfath, Mahdi ; Selberherr, Siegfried

  • Author_Institution
    Institute for Microelectronics, TU Wien, 1040 Vienna, Austria
  • fYear
    2008
  • fDate
    28-30 April 2008
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Carbon nanotubes (CNTs) have been studied in recent years due to their exceptional electronic, opto-electronic, and mechanical properties. To explore the physics of carbon nanotube field-effect transistors (CNT-FETs) self-consistent quantum mechanical simulations have been performed. The performance of carbon nanotube-based transistors is analyzed numerically, employing the non-equilibrium Green’s function formalism. Electron-phonon interaction parameters, such as electron-phonon coupling strength and phonon energy, strongly depend on the chirality and the diameter of the carbon nanotube. The steady-state and the dynamic response of carbon nanotube based transistors are studied for a wide range of electron-phonon interaction parameters.
  • Keywords
    CNTFETs; Carbon nanotubes; Charge carrier processes; Circuits and systems; Green´s function methods; MOSFETs; Mechanical factors; Microelectronics; Optoelectronic devices; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems, 2008. ICCDCS 2008. 7th International Caribbean Conference on
  • Conference_Location
    Cancun, Mexico
  • Print_ISBN
    978-1-4244-1956-2
  • Electronic_ISBN
    978-1-4244-1957-9
  • Type

    conf

  • DOI
    10.1109/ICCDCS.2008.4542676
  • Filename
    4542676