Title :
Current transport in carbon nanotube transistors
Author :
Pourfath, Mahdi ; Selberherr, Siegfried
Author_Institution :
Institute for Microelectronics, TU Wien, 1040 Vienna, Austria
Abstract :
Carbon nanotubes (CNTs) have been studied in recent years due to their exceptional electronic, opto-electronic, and mechanical properties. To explore the physics of carbon nanotube field-effect transistors (CNT-FETs) self-consistent quantum mechanical simulations have been performed. The performance of carbon nanotube-based transistors is analyzed numerically, employing the non-equilibrium Green’s function formalism. Electron-phonon interaction parameters, such as electron-phonon coupling strength and phonon energy, strongly depend on the chirality and the diameter of the carbon nanotube. The steady-state and the dynamic response of carbon nanotube based transistors are studied for a wide range of electron-phonon interaction parameters.
Keywords :
CNTFETs; Carbon nanotubes; Charge carrier processes; Circuits and systems; Green´s function methods; MOSFETs; Mechanical factors; Microelectronics; Optoelectronic devices; Photonic band gap;
Conference_Titel :
Devices, Circuits and Systems, 2008. ICCDCS 2008. 7th International Caribbean Conference on
Conference_Location :
Cancun, Mexico
Print_ISBN :
978-1-4244-1956-2
Electronic_ISBN :
978-1-4244-1957-9
DOI :
10.1109/ICCDCS.2008.4542676