A 0.5-6 GHz high gain low noise MMIC amplifier

Author

Eisenberg, J. ; Ou, W. ; Archer, J.

Author_Institution

Varian Associates, Santa Clara, CA, USA

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

83

Lastpage

86

Abstract

A high-gain, low-noise-figure, 0.5-6.0 GHz MMIC amplifier designed for system applications has been developed. The amplifier advances the state of the art because it is the first such MMIC to offer 24-dB minimum gain and under a 2.5-dB noise figure across its entire bandwidth. Gain flatness is less than +or-0.5 dB, while input and output VSWRs are both less than 2.0:1. The chip requires at most a single external resistor for biasing, as all blocking and bypass capacitors are on chip, making it extremely easy to use. The MMIC amplifier is fabricated using 0.5- mu m MBE MESFET technology and contains three 600- mu m FETs on a 1.52 mm*1.52 mm chip. The combination of wideband performance, small chip size, and ease of use make this MMIC amplifier ideal for many applications in the low microwave frequency range.<>

Keywords

MMIC; Schottky gate field effect transistors; microwave amplifiers; wideband amplifiers; 0.5 micron; 0.5 to 6 GHz; 2.5 dB; 24 dB; LNA; MBE MESFET technology; MMIC amplifier; SHF; UHF; high gain; low noise; monolithic microwave IC; wideband performance; Bandwidth; Broadband amplifiers; Capacitors; FETs; Low-noise amplifiers; MESFETs; MMICs; Microwave amplifiers; Noise figure; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69299

Filename

69299