Title :
Discovery of fundamental Graphene/Semiconductor Schottky diode equation
Author :
Shi-Jun Liang ; Lay Kee Ang
Author_Institution :
Eng. Product Dev., Singapore Univ. of Technol. & Design, Singapore, Singapore
Abstract :
We discover the new scaling of thermionic emission of graphene and then establish a fundamental Schottky diode equation for Graphene/Semiconductor (Gr/S) contact. We also discuss the contact resistance of Gr/S junction. The new physics law discovered in this work has been confirmed by experiments.
Keywords :
Schottky diodes; contact resistance; graphene; thermionic emission; contact resistance; graphene a; graphene/semiconductor contact; semiconductor Schottky diode equation; thermionic emission; Contact resistance; Graphene; Junctions; Mathematical model; Physics; Schottky diodes; Thermionic emission; graphene/semiconductor Schottky diode; thermionic emission;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
DOI :
10.1109/IVEC.2015.7223737
