The physics of conductivity at terahertz frequencies

Author

Kirley, Matt P. ; Booske, John H.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Wisconsin-Madison, Madison, WI, USA

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

Effective terahertz (THz) component and systems design requires accurate predictive models for the frequency-dependent conductivity of materials. We have measured the THz conductivity of metals (including rough surface effects) and doped silicon at 0.4 - 0.85 THz. After a comprehensive analysis, we conclude that the THz-regime conductivity of highly-doped Si is accurately described by Drude theory, while metal conductivity is accurately described by a combination of measured DC conductivity, Drude theory, and the Hammerstad-Bekkadal formula.

Keywords

electrical conductivity; elemental semiconductors; heavily doped semiconductors; silicon; DC conductivity; Drude theory; Hammerstad-Bekkadal formula; Si; effective terahertz component; frequency 0.4 THz to 0.85 THz; frequency-dependent conductivity; highly-doped silicon; metal conductivity; predictive models; system design; terahertz frequencies; terahertz-regime conductivity; Conductivity; Conductivity measurement; Frequency measurement; Predictive models; Rough surfaces; Surface roughness; Surface topography; Drude; Hammerstad; conductivity; dissipation; surface roughness; terahertz;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference (IVEC), 2015 IEEE International

Conference_Location

Beijing

Print_ISBN

978-1-4799-7109-1

Type

conf

DOI

10.1109/IVEC.2015.7223746

Filename

7223746