• DocumentCode
    1859154
  • Title

    A drift-diffusion subband model for the double-gate MOSFET

  • Author

    Abdallah, N. Ben ; Méhats, F. ; Pietra, P. ; Vauchelet, N.

  • Author_Institution
    Mathematiques pour l´´Industrie et la Physique, Univ. Paul Sabatier, Toulouse, France
  • fYear
    2005
  • fDate
    11-15 July 2005
  • Firstpage
    519
  • Abstract
    A self-consistent model for charged particles, accounting for quantum confinement, diffusive transport and electrostatic interaction is considered. In this coupled quantum-classical system, the coupling occurs in the momentum variable: the electrons are like point particles in the direction parallel to the gas (classical transport) while they behave like waves in the transversal direction (quantum description). Numerical implementation of this model provides a simulation of the transport of charge carriers in a quasi bidimensional electron gas confined in a nanostructure.
  • Keywords
    MOSFET; nanotechnology; semiconductor device models; charged particles; classical transport; coupled quantum-classical system; diffusive transport; double-gate MOSFET; drift-diffusion subband model; electrostatic interaction; momentum variable; nanostructure; quantum confinement; quantum description; quasi bidimensional electron gas; self-consistent model; Charge carriers; Electrons; Electrostatics; MOSFET circuits; Plasma temperature; Poisson equations; Statistics; Telephony; Temperature distribution; Thermodynamics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2005. 5th IEEE Conference on
  • Print_ISBN
    0-7803-9199-3
  • Type

    conf

  • DOI
    10.1109/NANO.2005.1500815
  • Filename
    1500815