DocumentCode
1859154
Title
A drift-diffusion subband model for the double-gate MOSFET
Author
Abdallah, N. Ben ; Méhats, F. ; Pietra, P. ; Vauchelet, N.
Author_Institution
Mathematiques pour l´´Industrie et la Physique, Univ. Paul Sabatier, Toulouse, France
fYear
2005
fDate
11-15 July 2005
Firstpage
519
Abstract
A self-consistent model for charged particles, accounting for quantum confinement, diffusive transport and electrostatic interaction is considered. In this coupled quantum-classical system, the coupling occurs in the momentum variable: the electrons are like point particles in the direction parallel to the gas (classical transport) while they behave like waves in the transversal direction (quantum description). Numerical implementation of this model provides a simulation of the transport of charge carriers in a quasi bidimensional electron gas confined in a nanostructure.
Keywords
MOSFET; nanotechnology; semiconductor device models; charged particles; classical transport; coupled quantum-classical system; diffusive transport; double-gate MOSFET; drift-diffusion subband model; electrostatic interaction; momentum variable; nanostructure; quantum confinement; quantum description; quasi bidimensional electron gas; self-consistent model; Charge carriers; Electrons; Electrostatics; MOSFET circuits; Plasma temperature; Poisson equations; Statistics; Telephony; Temperature distribution; Thermodynamics;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN
0-7803-9199-3
Type
conf
DOI
10.1109/NANO.2005.1500815
Filename
1500815
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