DocumentCode
1859214
Title
80 GHz distributed amplifiers with transferred-substrate heterojunction bipolar transistors
Author
Agarwal, B. ; Pullela, R. ; Lee, Q. ; Mensa, D. ; Guthrie, J. ; Rodwell, M.J.W.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
2
fYear
1998
fDate
7-12 June 1998
Firstpage
529
Abstract
We report distributed amplifiers with 80 GHz bandwidth, 6.7 dB gain and /spl sim/70 GHz bandwidth, 7.7 dB gain. These amplifiers were fabricated in the transferred-substrate heterojunction bipolar transistor integrated circuit technology. Transferred-substrate HBTs have very high f/sub max/ (>400 GHz) and have yielded distributed amplifiers with record gain-bandwidth product.
Keywords
bipolar MIMIC; distributed amplifiers; heterojunction bipolar transistors; millimetre wave amplifiers; travelling wave amplifiers; wideband amplifiers; 400 GHz; 6.7 dB; 7.7 dB; 70 GHz; 80 GHz; distributed amplifiers; gain-bandwidth product; heterojunction bipolar transistors; transferred-substrate HBT IC technology; Bandwidth; Bipolar transistors; Broadband amplifiers; Circuits; Distributed amplifiers; Gain; HEMTs; Heterojunction bipolar transistors; Microstrip; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.705048
Filename
705048
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