Title :
Strong quantum confinement and coulomb blockade effects in Ge quantum dots/SiO2 system
Author :
Liao, Wei-Ming ; Lai, Wei-Ting ; Li, Pei-Wen ; Kuo, Ming-Ting ; Chen, P.S. ; Tsai, M.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
Abstract :
We reported experimental observations of strong quantum confinement and coulomb blockade effects in germanium (Ge) quantum dots (QDs)/SiO2 system. With a CMOS-compatible method, nanometer-scale Ge QDs (less than 10 nm) could be controllably formed for novel optoelectronic device applications such as single-electron transistors (SETs) as well as light emitter or detectors. Distinguishable photoemission from Ge QDs and relevant blueshifts of the emission peaks are observed from room-temperature cathodoluminescence spectra. Ge QD SETs were also experimentally realized with a large single-electron addition energy and an energy level separation of 125 meV and 50 meV, respectively.
Keywords :
Coulomb blockade; cathodoluminescence; elemental semiconductors; germanium; light emitting devices; nanotechnology; photoemission; semiconductor quantum dots; sensors; silicon compounds; single electron transistors; 293 to 298 K; CMOS-compatible method; Ge-SiO2; blueshifts; coulomb blockade effects; detectors; distinguishable photoemission; emission peaks; energy level separation; germanium quantum dots/SiO2 system; light emitter; nanometer-scale quantum dots; optoelectronic device applications; room-temperature cathodoluminescence spectra; single-electron addition energy; single-electron transistors; strong quantum confinement; Energy states; Germanium; Light emitting diodes; Lighting control; Nanoscale devices; Optoelectronic devices; Photoelectricity; Potential well; Quantum dots; Single electron transistors;
Conference_Titel :
Nanotechnology, 2005. 5th IEEE Conference on
Print_ISBN :
0-7803-9199-3
DOI :
10.1109/NANO.2005.1500823
