DocumentCode
1859560
Title
A PFD and Charge Pump switching circuit to optimize the output phase noise of the PLL in 0.13-µm CMOS
Author
Hati, Manas Kumar ; Bhattacharyya, Tarun K.
Author_Institution
Adv. Technol. Dev. Centre, IIT Kharagpur, Kharagpur, India
fYear
2015
fDate
8-10 Jan. 2015
Firstpage
1
Lastpage
6
Abstract
This paper presents the design of a novel Phase Frequency Detector (PFD) and Charge Pump (CP) switching circuits for the frequency synthesizer in phase-locked loop (PLL). Our proposed PFD technique can eliminate the effect of missing edge and phase ambiguity problems in conventional PFDs circuit. Also, a novel CP circuit with a special switching scheme has been incorporated to reduce the current mismatch error and charge injection error problem with this new design technique. The design charge pump current mismatch has been checked in 0.13 μm CMOS process and worst case mismatch error is 0.025 μA for a control voltage range from 0.25 V to 1.0 V for a 1.2 volt supply voltage. Phase noise performance of the proposed PFD and CP circuit is about -117.3 dBc/Hz at 1 MHz offset frequency for a load capacitance of 10 fF. Current noise of our PFD and CP circuit has been measured from the transistors level simulation to find the phase noise of the fractional-N PLL, for output frequency of 2.2 GHz with 40 MHz reference signal in CppSim system simulator. Proposed PFD and CP switching circuit´s phase noise performance shows the 17.36 dB improvement compare to the NOR based PFD and 7.4 dB improvement compare to the NAND based PFD topology. Also, the effect of CP current mismatch and dc offset current at any of the current source or sink has been incorporated to check the effect on spur and phase noise of the fractional-N frequency synthesizer. In addition, charge pump current noise and phase noise modelling has been done here to find the output phase noise of the PLL considering the PFD and CP output current noise measured in transistor level in 0.13 μm CMOS.
Keywords
CMOS integrated circuits; charge injection; charge pump circuits; frequency synthesizers; integrated circuit design; optimisation; phase locked loops; phase noise; CMOS process; PLL; capacitance 10 fF; charge injection error; charge pump current noise; charge pump switching circuit; control voltage; fractional-N frequency synthesizer; frequency 2.2 GHz; mismatch error; output phase noise; phase frequency detector; phase noise modelling; phase-locked loop; size 0.13 mum; voltage 0.25 V to 1.0 V; voltage 1.2 V; CMOS integrated circuits; Detectors; Image edge detection; Phase frequency detector; Phase noise; Switches; Switching circuits; CMOS integrated circuits; charge pump switching circuit; dead zone; phase frequency detector; phase noise; timing jitter;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Systems, Architecture, Technology and Applications (VLSI-SATA), 2015 International Conference on
Conference_Location
Bangalore
Print_ISBN
978-1-4799-7925-7
Type
conf
DOI
10.1109/VLSI-SATA.2015.7050490
Filename
7050490
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