DocumentCode :
1859747
Title :
Implementation of a monolithic TPMS using CMOS-MEMS technique
Author :
Sun, Chih-Ming ; Tsai, Ming-Han ; Wang, Chuanwei ; Liu, Yu-Chia ; Fang, Weileun
Author_Institution :
Nanoengineering & Microsyst. Inst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2009
fDate :
21-25 June 2009
Firstpage :
1730
Lastpage :
1733
Abstract :
This study demonstrates a novel monolithic TPMS (tire pressure monitoring systems) using CMOS MEMS processes. This TPMS monolithic integrates the 3-axis capacitive accelerometer, capacitive pressure sensor, and platinum (Pt) thermal-resist temperature sensor on a single chip. The TPMS has been successfully implemented using TSMC 2P4M process and our in-house post-process. The footprint of TPMS chip containing sensors and sensing circuits is 2.5 mm times 2.5 mm. Measurement results show that sensitivities of tri-axis accelerometer etch direction are 0.54 mV/G (X-axis), 0.32 mV/G (Y-axis), and 0.19 mV/G (Z-axis). The sensitivities of pressure and temperature sensors are respectively 2.7 mV/ KPa and 1.74 mV/degC.
Keywords :
CMOS integrated circuits; accelerometers; capacitive sensors; microsensors; monitoring; pressure sensors; temperature sensors; tyres; 3-axis capacitive accelerometer; CMOS-MEMS; TSMC 2P4M process; capacitive pressure sensor; in-house post-process; monolithic tire pressure monitoring systems; platinum thermal-resist temperature sensor; sensing circuits; sensors; Accelerometers; CMOS process; Capacitive sensors; Circuits; Micromechanical devices; Monitoring; Platinum; Temperature sensors; Thermal sensors; Tires; Accelerometer; CMOS MEMS; Pressure sensor; TPMS; Temperature sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
Type :
conf
DOI :
10.1109/SENSOR.2009.5285736
Filename :
5285736
Link To Document :
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