DocumentCode :
1860270
Title :
Integration of aluminium oxide as a passivation layer in a high efficiency industrial process on n-type silicon solar cells
Author :
Brand, P. ; Veschetti, Y. ; Sanzone, V. ; Cabal, R. ; Pagés, X. ; Vanormelingen, K. ; Vermont, P.
Author_Institution :
LITEN, CEA, Le Bourget du Lac, France
fYear :
2011
fDate :
19-24 June 2011
Abstract :
This work aims at evaluating aluminium oxide (Al2O3) as an emitter passivation layer for Cz-silicon n-type solar cells fabricated with screen-printed metallization. The effect of firing on the emitter saturation current density obtained with Al2O3/SiNx was studied and compared to the one obtained with thermal SiO2/SiNx. An efficiency of 18.3% was achieved using Al2O3 for n-type solar cells, still limited by a low fill factor due to a high contact resistance.
Keywords :
aluminium compounds; contact resistance; current density; metallisation; passivation; silicon compounds; solar cells; Al2O3-SiN; SiO2-SiN; contact resistance; emitter passivation layer; emitter saturation current density; fill factor; n-type silicon solar cells; screen printed metallization; Aluminum oxide; Boron; Firing; Metallization; Passivation; Photovoltaic cells; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186127
Filename :
6186127
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1860270
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