• DocumentCode
    1860332
  • Title

    In-situ formation of an ion-doped porous structure for high sensitive humidity sensing utilizing low-cost UV sensitive glue

  • Author

    Chen, Ching-Hsiu ; Hung, Chia-Wei ; Lin, Che-Hsin

  • Author_Institution
    Dept. of Mech. & Electro-Mech. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
  • fYear
    2009
  • fDate
    21-25 June 2009
  • Firstpage
    1694
  • Lastpage
    1697
  • Abstract
    This paper presents a novel method for in-situ formation of an ion-doped porous structure for high sensitive humidity sensing utilizing low-cost UV sensitive epoxy. Nano-size granular polymer structures can be directly deposited on a substrate by exposing a UV sensitive epoxy in an organic solvent of alcohol. SEM observations indicate that the deposited porous structure is constructed by stacking polymer nano-particles of around 300 nm in size. A deliquescence salt of MgCl2 is simultaneously introduced into the porous sensing layer for enhancing the vapor absorption ability during the polymerization process. Results show that the sensitivity of the humidity sensor with the ion-doped porous structure is enhanced over 365 times greater than the sensor fabricated with the same material without ion-doped porous structure. The proposed method provides a simple and fast way to fabricated high performance humidity sensors.
  • Keywords
    granular structure; humidity sensors; nanoparticles; polymerisation; polymers; porous materials; scanning electron microscopy; SEM; deliquescence salt; high sensitive humidity sensor; ion-doped porous structure; low-cost UV sensitive glue; nanosize granular polymer structures; polymerization process; porous sensing layer; vapor absorption ability; Absorption; Chemical processes; Chemical sensors; Epoxy resins; Glass; Humidity; Nanostructures; Polymer films; Solvents; Substrates; UV-glue; deliquescence salt; humidity sensor; porosity; porous structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • Conference_Location
    Denver, CO
  • Print_ISBN
    978-1-4244-4190-7
  • Electronic_ISBN
    978-1-4244-4193-8
  • Type

    conf

  • DOI
    10.1109/SENSOR.2009.5285758
  • Filename
    5285758