Title :
Tuning of quantum-well infrared photodetectors using ion beam induced quantum-well intermixing
Author :
Johnston, M.B. ; Gal, M. ; Na Li ; Xingquan Liu ; Ning Li ; Wei Lu ; Shen, S.C. ; Fu, L. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Sch. of Phys., New South Wales Univ., Kensington, NSW, Australia
Abstract :
Summary form only given. Quantum well intermixing (QWI) is a method of considerable recent interest due to its wide applicability in optoelectronics. We shall demonstrate the use of intermixing in tuning quantum-well infrared photodetectors (QWIPs). The post-growth tuning of QWIPs allows the detector to be fine tuned to a particular wavelength band. We have previously shown that proton implantation can achieve large energy shifts with good recovery in the optical properties after standard annealing procedures. For the present study we have fabricated AlGaAs-GaAs QWIPs using molecular beam epitaxy.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; molecular beam epitaxial growth; optical fabrication; optical tuning; semiconductor growth; semiconductor quantum wells; AlGaAs-GaAs; AlGaAs-GaAs QWIP; fine tuned; ion beam induced quantum-well intermixing; large energy shifts; molecular beam epitaxy; optical properties; optoelectronics; post-growth tuning; proton implantation; quantum-well infrared photodetector tuning; standard annealing procedures; wavelength band; Annealing; Australia; Gallium arsenide; Ion beams; Laser tuning; Optical refraction; Photodetectors; Physics; Protons; Quantum wells;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.833824
