Tuning of quantum-well infrared photodetectors using ion beam induced quantum-well intermixing

Author

Johnston, M.B. ; Gal, M. ; Na Li ; Xingquan Liu ; Ning Li ; Wei Lu ; Shen, S.C. ; Fu, L. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Sch. of Phys., New South Wales Univ., Kensington, NSW, Australia

fYear

1999

fDate

28-28 May 1999

Firstpage

23

Abstract

Summary form only given. Quantum well intermixing (QWI) is a method of considerable recent interest due to its wide applicability in optoelectronics. We shall demonstrate the use of intermixing in tuning quantum-well infrared photodetectors (QWIPs). The post-growth tuning of QWIPs allows the detector to be fine tuned to a particular wavelength band. We have previously shown that proton implantation can achieve large energy shifts with good recovery in the optical properties after standard annealing procedures. For the present study we have fabricated AlGaAs-GaAs QWIPs using molecular beam epitaxy.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; molecular beam epitaxial growth; optical fabrication; optical tuning; semiconductor growth; semiconductor quantum wells; AlGaAs-GaAs; AlGaAs-GaAs QWIP; fine tuned; ion beam induced quantum-well intermixing; large energy shifts; molecular beam epitaxy; optical properties; optoelectronics; post-growth tuning; proton implantation; quantum-well infrared photodetector tuning; standard annealing procedures; wavelength band; Annealing; Australia; Gallium arsenide; Ion beams; Laser tuning; Optical refraction; Photodetectors; Physics; Protons; Quantum wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.833824

Filename

833824