Polarization and electron injection in silicon nitride induced by protons

The Kohlrausch behaviour of the polarization currents j=At^-α, which is found in many disordered insulators, has been detected in thin films of silicon nitride also. The material contains a small amount of hydrogen due to the growth process. Using a palladium electrode it was possible to incorporate additional hydrogen ions, i.e. protons. This results in an increase of A in the above formula by a factor 10. Furthermore it is found that electron injection is enhanced by the presence of additional protons