Title :
GaAs/Al/sub x/Ga/sub 1-x/As quantum cascade lasers
Author :
Sirtori, C. ; Kruck, P. ; Barbieri, S. ; Collot, P. ; Nagle, J. ; Beck, M. ; Faist, J. ; Oesterle, U.
Author_Institution :
lab. Central de Recherches, Thomson CSF, Orsay, France
Abstract :
Summary form only given. Since their first demonstration in 1995 quantum cascade (QC) lasers have been made only in GaInAs-AlInAs heterostructures grown lattice matched on InP. This is somewhat in contradiction with the principles of QC lasers which, based on intersubband transitions, should be independent of the specific semiconductor heterostructure used. By fabricating QC lasers in the AlGaAs-GaAs we demonstrate that the fundamental concepts and design criteria can be truly extended in other material systems, still preserving the same basic characteristics in terms of threshold currents and output power.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; quantum well lasers; AlGaAs-GaAs; GaAs/Al/sub x/Ga/sub 1-x/As quantum cascade lasers; GaInAs-AlInAs; GaInAs-AlInAs heterostructures; InP; QC lasers; basic characteristics; design criteria; fundamental concepts; intersubband transitions; lattice matched; output power; semiconductor heterostructure; threshold currents; Gallium arsenide; Indium phosphide; Laser transitions; Lattices; Optical design; Optical materials; Power lasers; Quantum cascade lasers; Semiconductor lasers; Semiconductor materials;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.833829
