• DocumentCode
    1860897
  • Title

    CNT-based gas ionizers with integrated MEMS gate for portable mass spectrometry applications

  • Author

    Velásquez-García, L.F. ; Gassend, B. ; Akinwande, A.I.

  • Author_Institution
    Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2009
  • fDate
    21-25 June 2009
  • Firstpage
    1646
  • Lastpage
    1649
  • Abstract
    We report the fabrication and experimental characterization of a novel low-cost carbon nanotube (CNT)-based electron impact ionizer (EII) with integrated gate for portable mass spectrometry applications. The device achieves low-voltage ionization using sparse forests of plasma-enhanced chemical vapor deposited (PECVD) CNTs field emitter tips, and a proximal gate with open apertures to facilitate electron transmission. The gate is integrated using a deep reactive ion etched (DRIE) spring-based high-voltage MEMS packaging technology. The device also includes a high aspect-ratio silicon structure (mufoam) that facilitates sparse CNT growth and limits the electron current per emitter. The devices were tested as field emitters in high vacuum (10-8 Torr). Electron emission starts at a gate voltage of 110 V, and reaches a current of 9 uA at 250 V (2.25 mW) with more than 55% of the electrons transmitted through the gate apertures. The devices were also tested as electron impact ionizers using argon. The experimental data demonstrates that the CNT-EIIs can operate at mtorr-level pressures while delivering 60 nA of ion current at 250 V with about 1% ionization efficiency.
  • Keywords
    carbon nanotubes; electron emission; electron impact ionisation; mass spectra; micromechanical devices; nanotechnology; packaging; plasma CVD; sputter etching; C; CNT field emitter tips; CNT growth; CNT-based electron impact ionizer; CNT-based gas ionizers; DRIE spring-based high voltage MEMS packaging technology; argon; carbon nanotube; current 60 nA; deep reactive ion etching; electron current; electron emission; electron transmission; field emitters; integrated MEMS gate; ion current; ionization efficiency; low-voltage ionization; microfoams; mtorr-level pressures; plasma-enhanced chemical vapor deposition; portable mass spectrometry applications; silicon structure; voltage 250 V; Apertures; Carbon nanotubes; Electron emission; Fabrication; Ionization; Mass spectroscopy; Micromechanical devices; Plasma applications; Plasma chemistry; Testing; 3D MEMS packaging; Carbon nanotubes (CNTs); DRIE; electron impact ionization; field emission; gas ionizer; portable mass spectrometry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • Conference_Location
    Denver, CO
  • Print_ISBN
    978-1-4244-4190-7
  • Electronic_ISBN
    978-1-4244-4193-8
  • Type

    conf

  • DOI
    10.1109/SENSOR.2009.5285776
  • Filename
    5285776