Title :
Deployment of Impurity-to-Efficiency (I2E) simulation tool
Author :
Powell, D.M. ; Fenning, D.P. ; Conrad, B.S. ; Hofstetter, J. ; Leliévre, J.F. ; Cañizo, C. Del ; Buonassisi, T.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
Metal impurities can limit the performance of crystalline silicon solar cells. We have created an Impurity-to-Efficiency (I2E) simulation tool that predicts the impact of as-grown iron impurities on final solar cell performance as a function of device processing conditions and cell architecture. Iron has been selected for initial study because it is a dominant metal impurity in silicon solar cells [1]. The tool highlights the importance of tailoring device-processing conditions to specific distributions and concentrations of iron in as-grown wafers. The tool consists of three coupled components: a kinetic simulation, a minority carrier lifetime calculator, and the PC1D device simulator [2]. We have deployed the simulator in a free web-accessible applet for use by the industrial and academic communities. The tool can be used to increase the performance of iron-limited cells by completing rapid process optimization studies.
Keywords :
carrier lifetime; elemental semiconductors; minority carriers; power engineering computing; silicon; solar cells; PC1D device simulator; as-grown iron impurities; cell architecture; crystalline silicon solar cells; impurity-to-efficiency simulation tool; kinetic simulation; metal impurity; minority carrier lifetime calculator; rapid process optimization; web-accessible applet; Computer architecture; Iron; Microprocessors; Performance evaluation; Photovoltaic cells; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186150