DocumentCode :
1860947
Title :
The mobility measurement of positive charge carrier in n-hexane
Author :
Ishii, S. ; Aoki, T. ; Nagao, M. ; Kosaki, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Japan
fYear :
1994
fDate :
23-26 Oct 1994
Firstpage :
854
Lastpage :
859
Abstract :
The mobilities of negative ions in liquid dielectrics have been investigated by many researchers. On the other hand, there have been only limited reports on the mobility of positive carriers. To clarify the mechanisms of electrical conduction and breakdown in dielectric liquids, it is also very important to measure the mobilities of positive charge carriers including holes. In this paper the mobility of positive charge carrier in n-hexane was measured by using a thin film tunnel emitter (Al·Al2O3·SiO·Au). This tunnel emitter has excellent features to inject either electrons or holes into a liquid. The mobility was estimated from the transient currents with the time of flight method. The mobility of positive charge carrier was a constant value, 4.7×10-4 cm2 V -1 s-1 for applied field strengths ranging from 50 to 140 kV cm-1. We discuss the carrier species including possible holes
Keywords :
carrier mobility; Al·Al2O3·SiO·Au; Al-Al2O3-SiO-Au; applied field strengths; dielectric liquids; electrical breakdown; liquid dielectrics; mobility measurement; n-hexane; positive charge carrier; thin film tunnel emitter; time of flight method; transient currents; Charge carrier processes; Charge carriers; Charge measurement; Current measurement; Dielectric breakdown; Dielectric liquids; Dielectric measurements; Dielectric thin films; Electric breakdown; Electric variables measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1994., IEEE 1994 Annual Report., Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
0-7803-1950-8
Type :
conf
DOI :
10.1109/CEIDP.1994.592076
Filename :
592076
Link To Document :
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