High efficiency n-type silicon solar cell with a novel inkjet-printed boron emitter

Formation of boron emitters for mass production of low-cost and high efficiency n-type silicon solar cells is a major challenge in the PV industry. In this paper, we report on the successful fabrication of high efficiency screen-printed 19.3% n-type silicon cell with V_oc of 646 mV, J_sc of 39.4 mA/cm², and FF of 75.6%, using boron dopant ink applied by inkjet printing to create boron-doped emitter. The detailed internal quantum efficiency (IQE) analysis showed excellent front surface recombination velocity (FSRV) of 15,000 cm/s and back surface recombination velocity (BSRV) of 66 cm/s. This demonstrates for the first time the promise of boron dopant ink for high performance n-type silicon solar cells.