DocumentCode
1861148
Title
Computationally efficient determination of threshold voltages in narrow-channel and short-channel MOSFETs using infinite-network manipulations
Author
An, Hgeong Keon ; Zemanian, A.H.
Author_Institution
State Univ. of New York, Stony Brook, NY, USA
fYear
1988
fDate
7-9 June 1988
Firstpage
647
Abstract
Infinite network theory provides a computationally advantageous method for computing the threshold voltage of a narrow-channel or short-channel MOSFET. It takes into account the fringing of the electric field upward into the air and sideways into the oxide and semiconductor. This approach also has the advantages of smaller computer memory requirements and execution times as compared with the classical method.<>
Keywords
computational complexity; insulated gate field effect transistors; semiconductor device models; computationally efficient method; computer memory requirements; determination of threshold voltages; electric field fringing; execution times; infinite-network manipulations; narrow channel MOSFETs; narrow channel effect; short channel effect; short-channel MOSFETs; Computer networks; Contacts; Dielectric substrates; Intelligent networks; Kelvin; MOSFETs; Poisson equations; Silicon; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location
Espoo, Finland
Type
conf
DOI
10.1109/ISCAS.1988.15009
Filename
15009
Link To Document