Title :
The field emission characteristics of vertical vacuum channel nanogaps
Author :
Xinghui Li ; Guodong Bai ; Hanyan Li ; Mingqing Ding ; Jinjun Feng ; Fujiang Liao
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Vacuum Electron., Beijing Vacuum Electron. Res. Inst., Beijing, China
Abstract :
Vertical vacuum channel nanogaps were fabricated on a metal-oxide-metal-semiconductor substrate using standard silicon semiconductor processing. The field emission characteristics of the nanogaps were investigated and the emission failures in testing were analyzed. The goal of the research aims to low-power, low-cost, high-speed vacuum nanochannel transistor and vacuum integrated circuit.
Keywords :
elemental semiconductors; field emission; integrated circuit testing; low-power electronics; nanotechnology; semiconductor device testing; silicon; transistors; vacuum microelectronics; Si; emission failures; field emission characteristics; metal-oxide-metal-semiconductor substrate; silicon semiconductor processing; vacuum integrated circuit; vacuum nanochannel transistor; vertical vacuum channel nanogaps; Electrodes; Etching; Vacuum technology; Field emission; nanofabrication; thin film; vacuum integrated circuit; vacuum transistor; vertical nanogap;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
DOI :
10.1109/IVEC.2015.7223833
