Title :
A 198.9GHz-to-201.0GHz injection-locked frequency divider in 65nm CMOS
Author :
Lin, Bo-Yu ; Lee, I-Ting ; Wang, Chiao-Hsing ; Liu, Shen-Iuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
An injection-locked frequency divider (ILFD) is realized in 65nm CMOS technology for G-band (140 to 220GHz) applications. Its core area is 0.2×0.16mm2. This ILFD consumes 8.8mW from a 1.1V supply excluding the buffers. Due to the limited output power of the source module (i.e., frequency multiplier), the measured locking range of this ILFD is from 198.9GHz to 201.0GHz.
Keywords :
CMOS integrated circuits; field effect MIMIC; frequency dividers; CMOS technology; G-band; frequency 198.9 GHz to 201.0 GHz; injection locked frequency divider; power 8.8 mW; size 65 mum; voltage 1.1 V; CMOS integrated circuits; CMOS technology; Frequency conversion; Impedance; Inductance; Inductors; Power generation; π-type LC network; G-band; injection-locked frequency divider; millimeter-wave;
Conference_Titel :
VLSI Circuits (VLSIC), 2010 IEEE Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5454-9
DOI :
10.1109/VLSIC.2010.5560265
