Title :
GaAs heterojunction bipolar transistor MMIC DC to 10 GHz direct-coupled feedback amplifier
Author :
Kobayashi, K.W. ; Esfandiari, R. ; Oki, A.K. ; Umemoto, D.K. ; Camou, J.B. ; Kim, M.E.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
A DC-to-10-GHz fixed-gain amplifier implemented with a GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) technology is described. The wideband amplifier design is based on Darlington-connected transistors with resistive feedback. A 3- mu m-emitter self-aligned-base ohmic metal HBT IC process (f/sub max/ approximately=30-40 GHz) with a simplified MBE growth structure is used to fabricate the amplifier. The feedback amplifier exhibits a flat 11-dB gain response to 6 GHz with a -3-dB roll-off at 10 GHz, 5-6-dB noise figure over the 10-GHz band, and 1-dB power compression of 11 dBm at midband. Compared to similar 0.5- mu m-gate GaAs MESFET wideband amplifiers, the HBT´s third-order intercept point (IP3)/DC power ratio is two times greater and the chip size seven times smaller. Compared to similar advanced silicon bipolar and previously reported HBT direct-coupled amplifier designs, the GaAs HBT amplifier reported has twice the bandwidth.<>
Keywords :
III-V semiconductors; MMIC; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; wideband amplifiers; 0 to 10 GHz; 11 dB; 3 micron; 30 to 40 GHz; 5 to 6 dB; Darlington-connected transistors; GaAs; MBE growth structure; MMIC; SHF; broadband type; direct-coupled feedback amplifier; fixed-gain amplifier; heterojunction bipolar transistor; monolithic microwave integrated circuit; ohmic metal HBT IC process; resistive feedback; self-aligned-base; wideband amplifier design; Bipolar integrated circuits; Broadband amplifiers; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69300
