High power tensile-strained GaAsP-AlGaAs quantum well diode lasers emitting between 718 nm and 735 nm

Summary form only given. Several important applications in medicine, spectroscopy and pumping of fs solid-state lasers like Cr:LiSAF require wavelengths in the 700-750 nm range. The use of a tensile strained GaAsP QW embedded in an AlGaAs waveguide is a promising design for high power lasers in this wavelength range, combining the advantages of an Al-free QW with the established growth and processing techniques for AlGaAs based lasers. Lower threshold current densities and higher internal efficiencies in comparison to compressively-strained InAlGaAs/AlGaAs and InGaAsP/InAlGaP structures, respectively, were demonstrated.