High power operation of DFB laser diodes with a decoupled confinement heterostructure

Author

Okada, Shogo ; Fujimoto, Takafumi ; Yamada, Y. ; Yamada, Y. ; Okubo, A. ; Muro, Keiji

Author_Institution

Electron. & Inf. Mater. Lab., Mitsui Chem. Inc., Chiba, Japan

fYear

1999

fDate

28-28 May 1999

Firstpage

45

Lastpage

46

Abstract

Summary form only given. As a suitable epitaxial structure for high power and high brightness LDs, we have proposed a decoupled confinement heterostructure (DCH) and reported on the characteristics of the devices. Here we present the results from a grating integrated structure, narrow-stripe DFB LD, based on DCH technology, and reveal the potential for single longitudinal and single spatial mode operation.

Keywords

brightness; distributed feedback lasers; laser modes; quantum well lasers; DFB laser diodes; InGaAs-AlGaAs; InGaAs/AlGaAs MQW; decoupled confinement heterostructure; epitaxial structure; grating integrated structure; high brightness LD; high power operation; narrow-stripe DFB LD; single longitudinal mode operation; single spatial mode operation; Apertures; Brightness; Diode lasers; Electric resistance; Indium gallium arsenide; Laser stability; Optical materials; Power generation; Power lasers; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.833855

Filename

833855