A high power and high efficiency monolithic power amplifier for local multipoint distribution service

Author

Siddiqui, M.K. ; Sharma, A.K. ; Callejo, L.G. ; Lai, R.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

2

fYear

1998

fDate

7-12 June 1998

Firstpage

569

Abstract

A high power and high efficiency monolithic power amplifier operating from 27.5 to 29.5 GHz is presented for local multipoint distribution service (LMDS). Using 0.15 /spl mu/m InGaAs-AlGaAs-GaAs pseudomorphic HEMT (PHEMT) devices, the two stage power amplifier on 4 mil GaAs substrate demonstrated greater than 16 dB small signal gain, 32 dBm (1.6 watts) power with 35% power-added-efficiency. The amplifier attained peak output power of 33.9 dBm (2.4 watts) and peak power-added efficiency of 37%. At the peak power level, the amplifier exhibited power densities in excess of 640 mw/mm which is the highest output power density attained by Ka-band monolithic power amplifiers.

Keywords

MMIC power amplifiers; 0.15 micron; 1.6 to 2.4 W; 16 dB; 27.5 to 29.5 GHz; 37 percent; GaAs; GaAs substrate; InGaAs-AlGaAs-GaAs; Ka-band; LMDS application; PHEMT devices; SHF; high efficiency power amplifier; high power monolithic amplifier; local multipoint distribution service; pseudomorphic HEMT; two stage power amplifier; Assembly; Distributed amplifiers; Gain; Gallium arsenide; High power amplifiers; Microwave integrated circuits; PHEMTs; Power amplifiers; Power generation; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.705057

Filename

705057