• DocumentCode
    1861733
  • Title

    Recent advances and future prospects in semiconductor lasers

  • Author

    Scifres, D.R.

  • Author_Institution
    SDL Inc., USA
  • fYear
    1999
  • fDate
    28-28 May 1999
  • Firstpage
    56
  • Abstract
    Summary form only given. Today´s semiconductor lasers come in a variety of shapes, sizes, materials, wavelengths, speeds, powers, and designs. Performance levels include wavelengths from 400 nm to 10 m and beyond, average powers up to kilowatts, and direct modulation rates of better than 20 GHz. These results are achieved by configurations ranging from single emitters to dense arrays, with emitter geometries that include edge-emitting Fabry-Perot lasers, vertical-cavity surface-emitting lasers, flared lasers, alpha-DFB lasers, EMLs, and quantum cascade lasers, among many others. This talk will provide an overview of the state-of-the-art in the field of semiconductor lasers as well as highlight some of the applications that are enabled by the rapidly developing semiconductor laser technology.
  • Keywords
    laser theory; optical modulation; semiconductor lasers; configurations; dense arrays; direct modulation rates; edge-emitting Fabry-Perot lasers; emitter geometries; flared lasers; performance levels; quantum cascade lasers; semiconductor lasers; single emitters; vertical-cavity surface-emitting lasers; Optical materials; Power lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor laser arrays; Semiconductor lasers; Semiconductor materials; Shape; Surface emitting lasers; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-595-1
  • Type

    conf

  • DOI
    10.1109/CLEO.1999.833870
  • Filename
    833870