DocumentCode
1861733
Title
Recent advances and future prospects in semiconductor lasers
Author
Scifres, D.R.
Author_Institution
SDL Inc., USA
fYear
1999
fDate
28-28 May 1999
Firstpage
56
Abstract
Summary form only given. Today´s semiconductor lasers come in a variety of shapes, sizes, materials, wavelengths, speeds, powers, and designs. Performance levels include wavelengths from 400 nm to 10 m and beyond, average powers up to kilowatts, and direct modulation rates of better than 20 GHz. These results are achieved by configurations ranging from single emitters to dense arrays, with emitter geometries that include edge-emitting Fabry-Perot lasers, vertical-cavity surface-emitting lasers, flared lasers, alpha-DFB lasers, EMLs, and quantum cascade lasers, among many others. This talk will provide an overview of the state-of-the-art in the field of semiconductor lasers as well as highlight some of the applications that are enabled by the rapidly developing semiconductor laser technology.
Keywords
laser theory; optical modulation; semiconductor lasers; configurations; dense arrays; direct modulation rates; edge-emitting Fabry-Perot lasers; emitter geometries; flared lasers; performance levels; quantum cascade lasers; semiconductor lasers; single emitters; vertical-cavity surface-emitting lasers; Optical materials; Power lasers; Quantum cascade lasers; Quantum well lasers; Semiconductor laser arrays; Semiconductor lasers; Semiconductor materials; Shape; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-595-1
Type
conf
DOI
10.1109/CLEO.1999.833870
Filename
833870
Link To Document