Title :
Photoreflectance characteristics and photovoltaic performance of CBD-CdS/Cu(In, Ga)Se2 thin-film solar cells
Author :
Choi, H.W. ; Chung, Y.D. ; Cho, D.H. ; Ahn, B.J. ; Song, J.H. ; Lee, K.S. ; Kim, J.
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
We have investigated the photoreflectance characteristics and the photovoltaic performance of Cu(In, Ga)Se2 (CIGS) thin-film solar cells that have CdS layers prepared by chemical bath deposition (CBD). The CdS was deposited on CIGS by three different conditions. (I) CdSO4 0.014 M, thiourea 0.014 M, NH4OH(30%) 60 ml, (II) CdSO4 0.0015 M, thiourea 0.074 M, NH4OH(30%) 56 ml, and (III) CdSO4 0.0015 M, thiourea 0.05 M, NH4OH(30%) 80 ml. The efficiencies of the solar cells fabricated in processes I, II, and III were 12.17 %, 14.47 %, and 14.97 %, respectively. Quantum efficiency spectra of the solar cells in the region of the CdS band gap showed consistent results with photoreflectance observations. The photoreflectance spectra of the solar cells indicate that different states were formed in CdS depending on the conditions of CBD processes.
Keywords :
cadmium compounds; copper compounds; gallium compounds; indium compounds; photoreflectance; semiconductor growth; solar cells; ternary semiconductors; thin film devices; CBD processes; CdS-CuInGaSe2; chemical bath deposition process; efficiency 12.17 percent; efficiency 14.47 percent; efficiency 14.97 percent; photoreflectance characteristics; photoreflectance observations; photoreflectance spectra; photovoltaic performance; quantum efficiency spectra; thin-film solar cells; Chemicals; Educational institutions; Interface states; Optical device fabrication; Optical films; Photovoltaic cells; Photovoltaic systems;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186186