Title :
Study of mutual and self-thermal resistance in 90nm SiGe HBTs
Author :
Jain, Vinesh ; Zetterlund, B. ; Peng Cheng ; Camillo-Castillo, R.A. ; Pekarik, John J. ; Adkisson, J.W. ; Qizhi Liu ; Gray, P.B. ; Kaushal, V. ; Kessler, T. ; Harame, D.
Author_Institution :
Microelectron. Div., IBM, Essex Junction, VT, USA
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
Impact of mutual thermal coupling on the performance of a single 90nm SiGe heterojunction bipolar transistor (HBT) due to the presence of power dissipating elements like other HBTs in near vicinity is presented in this paper. Mutual thermal resistance (Rth,mutual) has been computed as a function of spacing between the single HBT and a ring of HBTs surrounding the device. HBT structural design variations including device layout schemes, metal wire stack connected to the emitter, deep trench (DT) depth and emitter to DT spacing, for reduced self thermal resistance (Rth), have been explored in this paper. An updated thermal resistance model accounting for the heat flow through the metal wiring stack connected to the emitter is also reported.
Keywords :
Ge-Si alloys; heat transfer; heterojunction bipolar transistors; integrated circuit interconnections; semiconductor device models; thermal management (packaging); thermal resistance; DT depth; HBT; SiGe; deep trench depth; device layout schemes; heat flow; heterojunction bipolar transistor; metal wire stack; mutual thermal coupling; mutual thermal resistance; power dissipating elements; self-thermal resistance; size 90 nm; thermal resistance model; Abstracts; Digital video broadcasting; Irrigation; Resistance; Resistance heating; Wires; BiCMOS; HBT; SiGe; mutual thermal resistance; self-heating; thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798134
