Automated transit time and transfer current extraction for single transistor geometries

Author

Rosenbaum, T. ; Schroter, Michael ; Pawlak, Andreas ; Lehmann, Steffen

Author_Institution

Dept. for Electron Devices & Integrated Circuits, Univ. of Technol. Dresden, Dresden, Germany

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

25

Lastpage

28

Abstract

The purpose of this work is to establish an automated transit time and transfer current extraction tool for HICUM/L2. The key for realizing this goal was to create an equivalent circuit that includes all relevant elements influencing the extraction by mimicking the HICUM model code. For an accurate determination of the transit time, the equivalent circuit of the intrinsic transistor is required, which is obtained by deembedding the external elements using beforehand extraction information. The realized method is demonstrated to enable automated parameter determination with high accuracy.

Keywords

equivalent circuits; heterojunction bipolar transistors; semiconductor device models; HICUM model code; automated transfer current extraction; automated transit time extraction; equivalent circuit; heterojunction bipolar transistors; intrinsic transistor; single transistor geometry; Bismuth; Equivalent circuits; Integrated circuits; Parameter extraction; Resistance; Temperature measurement; Transistors; HICUM/L2 compact modeling; Heterojunction bipolar transistor; Parameter Extraction; Self-heating; Silicon-Germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798136

Filename

6798136