Title :
Advanced extraction procedure for parasitic collector series resistance contributions in high-speed BiCMOS technologies
Author :
Stein, Fridtjof ; Derrier, N. ; Maneux, Cristell ; Celi, D.
Author_Institution :
STMicroelectron., Crolles, France
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
The parasitic collector resistance is of high importance for device performance of HBT manufactured in advanced SiGe technologies. The external collector resistance contribution RCx is a critical modeling parameter for AC and transient operation. If the collector resistance is estimated incorrectly, the RF performance of the modeled device may significantly differ from the manufactured HBT. An advanced test structure for resistance extraction is presented and measured in two different ways. The obtained resistance values and extraction results are verified using analytical equations and quasi-three-dimensional device simulations.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; HBT; RF performance; SiGe; advanced extraction procedure; analytical equations; high-speed BiCMOS technology; parasitic collector series resistance; quasithree-dimensional device simulations; resistance extraction; Current measurement; Electrical resistance measurement; Geometry; Layout; Length measurement; Periodic structures; Resistance; Collector Resistance; Device Modeling; HBT; Heterojunction Bipolar Transistor; SiGe; Silicon Germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798138
