Title :
Cu2ZnSnS4 (CZTS) polycrystalline thin films prepared by sol-gel method
Author :
Jiang, Minlin ; Dhakal, Rabin ; Li, Yong ; Thapaliya, Prem ; Yan, Xingzhong
Author_Institution :
South Dakota State Univ., Brookings, SD, USA
Abstract :
Cu2ZnSnS4 (CZTS) thin films were prepared by annealing of spin-coated CZTS precursors. The CZTS precursors contain copper chloride, zinc chloride, tin chloride, thiourea and then were deposited on soda lime glass (SLG) and molybdenum-coated low-alkali glass substrates. The precursors were then annealed at 550 °C in different atmosphere. CZTS thin film annealed at 10 Torr with continuous flow of N2 showed a bandgap close to 1.40 eV and had continuously packed grains. Photovoltaic device with the structure of glass/Mo/CZTS/CdS/ZnO/ITO/Al was fabricated. A short-circuit current density of 5 mA/cm2 was achieved for the best cell which demonstrated a conversion efficiency of 0.63%.
Keywords :
annealing; copper compounds; semiconductor growth; semiconductor thin films; sol-gel processing; solar cells; spin coating; ternary semiconductors; thin film devices; tin compounds; zinc compounds; CZTS thin film; Cu2ZnSnS4; SLG; SiO2; annealing; copper chloride; molybdenum-coated low-alkali glass substrates; photovoltaic device; polycrystalline thin films; short-circuit current density; soda lime glass; sol-gel method; spin-coated CZTS precursor annealing; temperature 550 degC; thin film solar cells; thiourea; tin chloride; zinc chloride; Annealing; Optical device fabrication; Optical films; Photonic band gap; Photovoltaic cells; Tin;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186192
