Cu2ZnSnS4 (CZTS) polycrystalline thin films prepared by sol-gel method

Author

Jiang, Minlin ; Dhakal, Rabin ; Li, Yong ; Thapaliya, Prem ; Yan, Xingzhong

Author_Institution

South Dakota State Univ., Brookings, SD, USA

fYear

2011

fDate

19-24 June 2011

Abstract

Cu₂ZnSnS₄ (CZTS) thin films were prepared by annealing of spin-coated CZTS precursors. The CZTS precursors contain copper chloride, zinc chloride, tin chloride, thiourea and then were deposited on soda lime glass (SLG) and molybdenum-coated low-alkali glass substrates. The precursors were then annealed at 550 °C in different atmosphere. CZTS thin film annealed at 10 Torr with continuous flow of N₂ showed a bandgap close to 1.40 eV and had continuously packed grains. Photovoltaic device with the structure of glass/Mo/CZTS/CdS/ZnO/ITO/Al was fabricated. A short-circuit current density of 5 mA/cm² was achieved for the best cell which demonstrated a conversion efficiency of 0.63%.

Keywords

annealing; copper compounds; semiconductor growth; semiconductor thin films; sol-gel processing; solar cells; spin coating; ternary semiconductors; thin film devices; tin compounds; zinc compounds; CZTS thin film; Cu₂ZnSnS₄; SLG; SiO₂; annealing; copper chloride; molybdenum-coated low-alkali glass substrates; photovoltaic device; polycrystalline thin films; short-circuit current density; soda lime glass; sol-gel method; spin-coated CZTS precursor annealing; temperature 550 degC; thin film solar cells; thiourea; tin chloride; zinc chloride; Annealing; Optical device fabrication; Optical films; Photonic band gap; Photovoltaic cells; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186192

Filename

6186192