DocumentCode :
1862071
Title :
Improved optical transmittance of boron doped ZnO thin films by low pressure chemical vapor deposition with pulse boron doping
Author :
Lee, Chang-Soo ; Ahn, B.T.
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fYear :
2011
fDate :
19-24 June 2011
Abstract :
A pulse doping technique is introduced to obtain boron doped ZnO thin films with high conductivity and improved transmittance. The ZnO thin films were deposited by low pressure chemical vapor deposition and boron was doped into the ZnO thin films by the pulse supply of B2H6 gas. The pulse boron doped ZnO thin films exhibited a well textured surface morphology with large pyramid shape grains and a minimum resistivity about 1.0 × 10-3Ω·cm. These films also had a lower carrier concentration and higher mobility than conventional boron doped ZnO thin film, which has a similar conductivity value. In addition, because of lower carrier concentration and larger surface grains, the pulse boron doped ZnO films exhibited enhanced total transmittance in the near-infrared wavelength range and diffuse transmittance in the overall wavelength range compared to the conventional boron doped ZnO thin film. CIGS solar cells using pulse boron doped ZnO film showed higher efficiency than those using conventional boron doped ZnO film. Based on these results, we suggest a modified low pressure chemical vapor deposition process with pulse boron doping, which is an advantageous technique to deposit doped ZnO thin films with favorable electrical and optical properties for thin film solar cells.
Keywords :
II-VI semiconductors; boron; chemical vapour deposition; optical properties; semiconductor thin films; solar cells; thin film devices; wide band gap semiconductors; CIGS solar cells; CuInGaSe2; ZnO:B; boron doped zinc oxide thin films; carrier concentration; diffuse transmittance; electrical properties; gas pulse supply; improved optical transmittance; modified low pressure chemical vapor deposition process; near-infrared wavelength range; optical properties; pulse boron doped thin films; pulse doping technique; pyramid shape grains; surface grains; thin film solar cells; Boron; Conductivity; Doping; Films; Photovoltaic cells; Surface morphology; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186195
Filename :
6186195
Link To Document :
بازگشت