A 4GS/s 8bit ADC fabricated in 0.35µm SiGe BiCMOS technology

Author

Danyu Wu ; Fan Jiang ; Lei Zhou ; Jin Wu ; Yinkun Huang ; Zhi Jin ; Xinyu Liu

Author_Institution

Microwave Device & Integrated Circuits Dept., Inst. of Microelectron., Beijing, China

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

69

Lastpage

72

Abstract

In this paper, a low cost 4GS/s 8bit Folding-and-Interpolation (F&I) ADC has been demonstrated. To avoid threshold-mismatch and delay-mismatch between coarse and fine quantizer, a novel coarse quantizer with analog pre-processing circuits are proposed. According to the measurement result, the proposed coarse quantizer has successfully eliminated the glitch code. The ADC is capable of sampling analog input frequencies up to 1.5GHz with greater than 7.0 effective number of bits (ENOB) performance. The ADC has a die size of 3.8×3.8 mm² and consumes 4.1W of power.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; analogue processing circuits; analogue-digital conversion; ADC; BiCMOS technology; SiGe; analog input frequencies; analog preprocessing circuits; coarse quantizer; delay mismatch; glitch code; power 4.1 W; size 0.35 mum; threshold mismatch; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Feeds; Interpolation; Silicon germanium; Synchronization; Folding and Interpolating; SiGe BiCMOS; Time-Interleaved; analog pre-processing circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798146

Filename

6798146