Schottky Barrier Diodes in 90nm SiGe BiCMOS process operating near 2.0 THz cut-off frequency

Author

Jain, Vinesh ; Peng Cheng ; Gross, B.J. ; Camillo-Castillo, Renata ; Pekarik, John J. ; Adkisson, J.W. ; Qizhi Liu ; Gray, P.B. ; Kaushal, V. ; Harame, D. ; DiVergilio, Adam W.

Author_Institution

IBM, Essex Junction, VT, USA

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

73

Lastpage

76

Abstract

High performance Schottky Barrier Diodes (SBDs) with cut-off frequency (f_c) ~2.0 THz integrated into a 90nm SiGe BiCMOS technology for millimeter wave (mm-wave) applications are presented in this paper. To our knowledge, this is the highest reported f_c for a SBD in a BiCMOS technology. The SBDs reported here have low reverse bias leakage with breakdown voltage of ~5V, and have been integrated in the base technology without the addition of any extra processing step. The affects of variation of critical process and device parameters - undoped silicon layer (n-epi) thickness, thermal cycle associated with deep-trench formation, cathode reach-through width, and anode area on device performance have also been investigated and are presented here.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; Schottky diodes; millimetre wave diodes; semiconductor device breakdown; BiCMOS process; SBD; Schottky barrier diodes; SiGe; cathode reach-through width; critical process; cut-off frequency; deep trench formation; reverse bias leakage; size 90 nm; thermal cycle; Anodes; BiCMOS integrated circuits; Cathodes; Performance evaluation; Resistance; Schottky diodes; Silicon germanium; BiCMOS; Schottky diodes; SiGe; cutoff frequency; diodes; mm-wave; terahertz (THz);

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798147

Filename

6798147