• DocumentCode
    1862209
  • Title

    Optimization of back contacts for CdTe solar cells using sputtered CuxTe

  • Author

    Nawarange, A.V. ; Compaan, A.D.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Toledo, Toledo, OH, USA
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    For cadmium telluride solar cells, the back contact material and its properties are still a challenge in terms of increasing and stabilizing the efficiency. This paper discusses RF magnetron sputtering of three different stoichiometries of CuxTe (x= 1, 1.4, 2) material for back contacts to sputtered CdTe solar cells. Thin films were grown first on aluminosilicate glass (ASG) to optimize resistivity, carrier concentration, and mobility and to identify the crystallographic phases of CuxTe. Films were then deposited on complete cell structures to determine efficiency and other cell performance parameters. Thickness and post-deposition annealing temperature were varied to optimize cell performance. Among the three compositions, the Cu2Te target produced the best efficiency at 200°C substrate temperature using conditions that yielded Cu1.4Te as the dominant phase in the sputtered films. This produced cells with efficiency of >;13%.
  • Keywords
    III-VI semiconductors; annealing; cadmium compounds; carrier mobility; copper compounds; electrical resistivity; semiconductor growth; semiconductor thin films; solar cells; sputtered coatings; tellurium compounds; ASG; CdTe; CuXTe; RF magnetron sputtering; aluminosilicate glass; back contacts; back contacts optimization; cadmium telluride solar cells; carrier concentration; carrier mobility; cell performance parameters; crystallographic phases; post-deposition annealing temperature; resistivity; sputtered films; thin films; Annealing; Conductivity; Copper; Films; Substrates; Temperature measurement; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186201
  • Filename
    6186201