Title :
A versatile low-cost smart power technology platform for applications over broad current and voltage ranges
Author :
Zhi Lin ; Hao Hu ; Junji Cheng ; Xingbi Chen
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
A versatile low-cost manufacturing technology, which is based on the optimum variation lateral doping technique, is proposed for smart power ICs in this paper. The proposed technology is capable to combine the lateral and vertical high voltage (> 800V) devices on a single chip, which is suitable for applications over broad current ranges. It is fully compatible with BiCMOS process and has been implemented on a standard CMOS line with only 11 masks. Devices with various breakdown voltages, as well as a switched-mode power supply chip, are successfully fabricated on this platform. The measured results are displayed and discussed in detail.
Keywords :
BiCMOS integrated circuits; integrated circuit manufacture; power integrated circuits; semiconductor doping; switched mode power supplies; BiCMOS process; breakdown voltages; low-cost manufacturing technology; low-cost smart power technology platform; optimum variation lateral doping technique; smart power ICs; standard CMOS line; switched-mode power supply chip; CMOS integrated circuits; Doping; Low voltage; Medium voltage; Substrates; Switched-mode power supply; BiCMOS compatible; lateral and vertical integration; low-cost solution; optimum variation lateral doping technique; smart power technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798152
