DocumentCode
18623
Title
High-power-tolerant InAlAs avalanche photodiode for 25 Gbit/s applications
Author
Nada, Masahiro ; Muramoto, Yoshifumi ; Yokoyama, Haruki ; Ishibashi, Takayuki ; Matsuzaki, Hideaki
Author_Institution
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Volume
49
Issue
1
fYear
2013
fDate
January 3 2013
Firstpage
62
Lastpage
63
Abstract
A wide optical-input dynamic range is demonstrated for an inverted p-down InAlAs/InGaAs avalanche photodiode. The 3 dB down bandwidth maintains a value as high as 18 GHz for an input optical power level of up to + 2.5 dBm. Such high-power tolerance meets the requirements of various future optical fibre communications systems such as 100 Gbit/s Ethernet which has a serial baud rate of 25 Gbit/s.
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical fibre communication; Ethernet; InAlAs-InGaAs; bit rate 25 Gbit/s; high-power-tolerant avalanche photodiode; inverted p-down avalanche photodiode; optical fibre communications systems; optical-input dynamic range;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.3922
Filename
6415450
Link To Document