DocumentCode :
1862387
Title :
Unexpected electric breakdown effects in a foilless diode
Author :
Yibing Cao ; Jun Sun ; Ping Wu ; Zhimin Song ; Yan Teng ; Yuqun Deng ; Yanchao Shi ; Changhua Chen
Author_Institution :
Sci. & Technol. on High Power Microwave Lab., Northwest Inst. of Nucl. Technol., Xi´an, China
fYear :
2015
fDate :
27-29 April 2015
Firstpage :
1
Lastpage :
2
Abstract :
In the paper, unexpected electric breakdown effects in a foilless diode is examined and analyzed. In our viewpoint, the breakdown is mainly caused by the side emission on the cathode strut. Such a breakdown can result in degrade of the diode voltage waveform. The simulation model is built and the simulation results are further verified by the related experiments. As indicated in the studies, a careful design will be necessary for a foilless diode.
Keywords :
cathodes; semiconductor device breakdown; semiconductor device models; semiconductor diodes; cathode strut; diode voltage waveform; electric breakdown effects; foilless diode; side emission; simulation model; Cathodes; Coils; Electric breakdown; Generators; Magnetic analysis; Magnetic forces; breakdown; emission; foilless diode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
Type :
conf
DOI :
10.1109/IVEC.2015.7223878
Filename :
7223878
Link To Document :
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