40-Gbit/s ICs for future lightwave communications systems

Author

Otsuji, T. ; Sano, E. ; Imai, Y. ; Enoki, T.

Author_Institution

NTT Syst. Electron. Labs., Kanagawa, Japan

fYear

1996

fDate

3-6 Nov. 1996

Firstpage

14

Lastpage

17

Abstract

This paper reviews recent advances in 40-Gbit/s class analog and digital ICs developed at our laboratories for future lightwave communications systems. A 0.1-/spl mu/m gate InAlAs/InGaAs HEMT with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing and amplifying operation at 40 Gbit/s.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect analogue integrated circuits; field effect digital integrated circuits; gallium arsenide; indium compounds; integrated circuit technology; optical communication equipment; 1 micron; 40 Gbit/s; HEMT; IC fabrication; InAlAs-InGaAs; InP; amplifying operation; analog ICs; data-multiplexing; demultiplexing; digital ICs; lightwave communications systems; recess etch stopper; Baseband; Circuits; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Laboratories; MODFETs; Multiplexing; Optical transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual

Conference_Location

Orlando, FL, USA

ISSN

1064-7775

Print_ISBN

0-7803-3504-X

Type

conf

DOI

10.1109/GAAS.1996.567627

Filename

567627