A broadband 24 GHz bandwidth 54 dB gain 180-mW amplifier employing common-collector combined with capacitive controlled cross-coupled feedback in 0.35 µm SiGe technology

Author

Gharib, Ahmed ; Fischer, Georg ; Weigel, Robert ; Kissinger, Dietmar

Author_Institution

Inst. for Electron. Eng., Univ. for Erlangen-Nuremberg, Erlangen, Germany

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

115

Lastpage

118

Abstract

A 54 dB gain amplifier with a 3-dB bandwidth of 24 GHz is presented in this paper. The amplifier consists of three differential stages employing two different feedback techniques that are responsible for the bandwidth extension, without any noticeable reduction of gain, as well as a relatively flat gain response with negligible increase in area and power consumption. The amplifier consumes 180mW from a 3.3V supply and shows a gain-bandwidth product (GBP) of 12 THz.

Keywords

Ge-Si alloys; feedback amplifiers; microwave amplifiers; power consumption; wideband amplifiers; SiGe; SiGe technology; bandwidth 12 THz; bandwidth 24 GHz; bandwidth extension; broadband amplifier; capacitive controlled feedback; common-collector; cross-coupled feedback; flat gain response; gain 3 dB; gain 54 dB; power 180 mW; power consumption; size 0.35 mum; voltage 3.3 V; Bandwidth; Broadband communication; CMOS integrated circuits; Gain; Impedance; Impedance matching; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798157

Filename

6798157