Title :
A robust 3W high efficiency 8-14 GHz GaAs/AlGaAs heterojunction bipolar transistor power amplifier
Author :
Salib, M. ; Gupta, A. ; Ezis, A. ; Lee, M. ; Murphy, M.
Author_Institution :
Lab. of Adv. Technol., Northrop Grumman Corp., Linthicum, MD, USA
Abstract :
A monolithic power amplifier has been developed using GaAs/AlGaAs HBT technology. This amplifier uses cascode HBTs and provides /spl sim/3 W CW from 8 to 14 GHz with a power added efficiency of /spl sim/40% and a gain of /spl sim/15 dB. The cascode HBT is designed to be free of burnout problems associated with current collapse. Spurious signals at the output of the MMIC are kept /spl sim/50 dBc, worst case, and phase noise 1 kHz from the carrier is -130 to -140 dBc/Hz, better than that of comparable PHEMT amplifiers.
Keywords :
gallium arsenide; 15 dB; 3 W; 40 percent; 8 to 14 GHz; GaAs-AlGaAs; GaAs/AlGaAs HBT technology; HBT power amplifier; MMIC; SHF; cascode HBTs; heterojunction bipolar transistor; high efficiency amplifier; monolithic power amplifier; Bandwidth; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; PHEMTs; Phase noise; Power amplifiers; Robustness; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705060
